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2SC4767

Panasonic Semiconductor
Part Number 2SC4767
Manufacturer Panasonic Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description Productnnua 2.3±0.2 Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification s Featu...
Datasheet PDF File 2SC4767 PDF File

2SC4767
2SC4767

Overview
Productnnua 2.
3±0.
2 Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification s Features q High transition frequency fT.
q Output of 0.
6W is obtained in the VHF band (f=175MHz).
s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 36 16 3 0.
5 0.
3 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 13.
5±0.
5lifecycleen 0.
7±0.
2dce/ 8.
0±0.
2 stage.
5.
0±0.
2 Unit: mm 4.
0±0.
2 0.
7±0.
1 1.
27 +0.
15 0.
45 –0.
1 +0.
15 0.
45 –0.
1 1.
27 123 2.
54±0.
15 1:Emitter 2:Collector 3:Base TO–92NL Package s Electrical Characteristics (Ta=25˚C) Parameter Symbol Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance High-frequency output Overall efficiency ICBO hFE VCE(sat) fT Cob PO* η Conditions min typ max Unit VCB = 20V, IE = 0 VCE = 13.
5V, IC = 100mA** 10 µA 50 IC = 100mA, IB = 10mA 1V VCB = 10V, IE = –100mA, f = 200MHz 1.
5 2 GHz VCB = 10V, IE = 0, f = 1MHz 4 8 pF VCC = 13.
5V, Pi = 0.
03W, f = 175MHz 0.
6 0.
9 W VCC = 13.
5V, Pi = 0.
03W, f = 175MHz 60 % *Refer to the PO measurment circuit ** Pulse measurement PlehtatMspae:i//nvitwseitwnfaw.
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Transistor The high-frequency output measurement circuit at 175MH...


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