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2SD1444A

Panasonic Semiconductor
Part Number 2SD1444A
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SB953, 2SB953A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1444 ...
Datasheet PDF File 2SD1444A PDF File

2SD1444A
2SD1444A

Overview
Power Transistors 2SB953, 2SB953A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1444 and 2SD1444A 0.
7±0.
1 Unit: mm 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 φ3.
1±0.
1 1.
4±0.
1 1.
3±0.
2 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 3 4.
2±0.
2 s Features q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB953 2SB953A 2SB953 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) –40 –50 –20 –40 –5 –12 –7 30 2 150 –55 to +150 4.
0 14.
0±0.
5 Solder Dip Ratings Unit V emitter voltage 2SB953A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 16.
7±0.
3 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw 7.
5±0.
2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB953 2SB953A 2SB953 2SB953A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT Cob ton tstg tf IC = –2A, IB1 = –66mA, IB2 = 66mA Conditions VCB = –40V, IE = 0 VCB = –50V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.
1A VCE = –2V, IC = –2A IC = –5A, IB = – 0.
16A IC = –5A, IB = – 0.
16A VCE = –10V, IC = – 0.
5A, f = 10MHz VCB = –10V, IE = 0, f = 1MHz 150 140 0.
1 0.
5 0.
1 –20 –40 45 90 260 – 0.
6 –1.
5 V V MHz pF µs µs µs min typ max –50 –50 –50 Unit µA µA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification.
Rank hFE2 1 Power Transistors PC — Ta 50 –6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 5...


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