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2SD2123

Hitachi Semiconductor
Part Number 2SD2123
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with ...
Datasheet PDF File 2SD2123 PDF File

2SD2123
2SD2123

Overview
2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1.
Base 2.
Collector 3.
Emitter 4.
Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 2SD2122(L)/(S) 2SD2123(L)/(S) Unit 180 120 5 1.
5 3 18 150 –55 to +150 180 160 5 1.
5 3 18 150 –55 to +150 V V V A A W °C °C Electrical Characteristics (Ta = 25°C) 2SD2122(L)/(S) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 2 2SD2123(L)/(S) Min 180 160 5 — 60 30 — — — — Typ — — — — —...


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