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2SD2144

Part Number	2SD2144
Manufacturer	Rohm
Description	High-current Gain Medium Power Transistor
Published	Apr 3, 2005
Datasheet	2SD2144 PDF File

Features

1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm)

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