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2SD2531

Part Number	2SD2531
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2531 Power Amplifier Applications 2SD2531 Unit: mm • Low collec...
Datasheet	2SD2531 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2531 Power Amplifier Applications 2SD2531 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.
5 V (typ.
) (IC = 2.
5 A, IB = 0.
25 A) • High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current IC 4 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.
0 W 25 JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA SC-67 2-10R1A Note: Using continuously under heavy loa...

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