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2SD2561

Sanken electric
Part Number 2SD2561
Manufacturer Sanken electric
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Equivalent circuit C Darlington 2SD2561 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) f...
Datasheet PDF File 2SD2561 PDF File

2SD2561
2SD2561

Overview
Equivalent circuit C Darlington 2SD2561 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=–2A VCB=10V, f=1MHz 2SD2561 100max 100max 150min 5000min∗ 2.
5max 3.
0max 70typ 120typ V V MHz pF 20.
0min 4.
0max 2 3 B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2561 150 150 5 17 1 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions MT-200 36.
4±0.
3 24.
4±0.
2 2-ø3.
2±0.
1 9 7 21.
4±0.
3 2.
1 6.
0±0.
2 µA µA V a b 1.
05 +0.
2 -0.
1 5.
45±0.
1 B C E 5.
45±0.
1 0.
65 +0.
2 -0.
1 3.
0 +0.
3 -0.
1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL (Ω) 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 10 ...


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