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2SD2584

Toshiba Semiconductor
Part Number 2SD2584
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type (darlington) 2SD2584 High Power Switching Applications Hammer Drive,...
Datasheet PDF File 2SD2584 PDF File

2SD2584
2SD2584


Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type (darlington) 2SD2584 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SD2584 Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) · Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 3 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 120 100 6 7 10 0.
7 1.
5 20 150 −55 to 150 Unit V V V A A W °C °C Equivalent Circuit COLLEC...



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