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2SD2598

Panasonic Semiconductor
Part Number 2SD2598
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Transistor 2SD2598 0.15 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm 6.9±0.1...
Datasheet PDF File 2SD2598 PDF File

2SD2598
2SD2598

Overview
Transistor 2SD2598 0.
15 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm 6.
9±0.
1 0.
7 4.
0 1.
05 2.
5±0.
1 ±0.
05 (1.
45) 0.
8 0.
5 4.
5±0.
1 0.
45–0.
05 2.
5±0.
1 q q q Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000.
A shunt resistor is omitted from the driver.
M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
0.
45–0.
05 +0.
1 +0.
1 2.
5±0.
5 1 2 2.
5±0.
5 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 60 50 5 750 500 1 150 –55 ~ +150 1cm2 Unit V V V mA mA W ˚C ˚C Symbol VCBO VCEO VEBO ICP IC PC*1 Tj Tstg Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1:Emitter 2:Collector 3:Base MT2 Type Package 1.
2±0.
1 0.
65 max.
0.
1 0.
45+ – 0.
05 (HW type) Internal Connection C B Printed circuit board: Copper foil area of thickness of 1.
7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency *1h FE (Ta=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE *1 E Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = 500mA*2 0.
5mA*2 IC = 500mA, IB = 0.
5mA*2 IC = 500mA, IB = VCB = 10V, IE = –50mA, f = 200MHz min typ max 100 100 60 50 5 4000 20000 2.
5 3.
0 200 *2 14.
5±0.
5 s Features 0.
65 max.
1.
0 1.
0 0.
2 Unit nA nA V V V VCE(sat) VBE(sat) fT V V MHz Rank classification...


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