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K4R271669A

Samsung semiconductor
Part Number K4R271669A
Manufacturer Samsung semiconductor
Description 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
Published Apr 7, 2005
Detailed Description K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision...
Datasheet PDF File K4R271669A PDF File

K4R271669A
K4R271669A

Overview
K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.
02 January 2000 Page -1 Rev.
1.
02 Jan.
2000 K4R271669A/K4R441869A Revision History Version 1.
0 (July 1999) - Preliminary - Based on the Rambus Datasheet 1.
0 ver.
Direct RDRAM™ Version 1.
01 (October 1999) On page 1 - Delete the part numbers of low power On page 32 - Add the data of CNFGA Register @ Figure 28 On page 33 - Add the data of CNFGB Register @ Figure 29 and correct the CORG4.
.
0 field of CNFGB register On page 44 - Add the Tj value from TBD to Max.
100°C @ Table 18 On page 46 - Add the ΘJC value from TBD to 0.
2°C/Watt @ Table 20 On page 55 - Add the current values for 356MHz and 300MHz RDRAM device Version 1.
02 (January 2000) * Change the part number of RDRAM Component according to New Code System since ’00.
Jan.
1st On page 45 - Reduce swing of VIH,CMOS & VIL,CMOS from “0.
5VCMOS±0.
6V“ to “0.
5VCMOS±0.
4V“ - Relax tS1 from 1.
0ns to “1.
25ns“ ( But, Keep tH...


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