DatasheetsPDF.com

K4R271669E

Samsung semiconductor
Part Number K4R271669E
Manufacturer Samsung semiconductor
Description 128Mbit RDRAM(E-die)
Published Apr 7, 2005
Detailed Description K4R271669E Direct RDRAM™ 128Mbit RDRAM(E-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -...
Datasheet PDF File K4R271669E PDF File

K4R271669E
K4R271669E

Overview
K4R271669E Direct RDRAM™ 128Mbit RDRAM(E-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.
4 July 2002 Page -1 Version 1.
4 July 2002 K4R271669E Change History Version 1.
4 ( July 2002 ) Direct RDRAM™ - First Copy ( Version 1.
4 is named to unify the version of component and device operation datasheets) - Based on the 128Mbit D-die RDRAM for short channel Datasheet Version 1.
4 Page 0 Version 1.
4 July 2002 K4R271669E Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including communications, graphics, video and any other application where high bandwidth and low latency are required.
The 128Mbit RDRAM devices are extremely high-speed CMOS DRAMs organized as 8M words by 16.
The use of Rambus Signaling Level (RSL) technology permits 800MHz transfer rate while using conventional system and board design technologies.
RDRAM devices are capable of sustained data transfers at 1.
25 ns per two bytes (10...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)