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K4R271669F

Samsung semiconductor
Part Number K4R271669F
Manufacturer Samsung semiconductor
Description 128Mbit RDRAM(F-die)
Published Apr 7, 2005
Detailed Description K4R271669F Direct RDRAM™ 128Mbit RDRAM(F-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Pa...
Datasheet PDF File K4R271669F PDF File

K4R271669F
K4R271669F

Overview
K4R271669F Direct RDRAM™ 128Mbit RDRAM(F-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.
41 January 2004 Page -1 Version 1.
41 Jan.
2004 K4R271669F Change History Version 1.
4 ( September 2003 ) Direct RDRAM™ - First Copy ( Version 1.
4 is named to unify the version of component and device operation datasheets) - Based on the 128Mbit E-die RDRAM for short channel Datasheet Version 1.
4 Version 1.
41 ( January 2004 ) - Add the part number for leaded package.
Page 0 Version 1.
41 Jan.
2004 K4R271669F Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including communications, graphics, video and any other application where high bandwidth and low latency are required.
The 128Mbit RDRAM devices are extremely high-speed CMOS DRAMs organized as 8M words by 16.
The use of Rambus Signaling Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design technologies.
RDRAM devices are capable of sustained data transfers at 1.
25 ns per two bytes (10ns per sixteen bytes).
The architecture of RDRAM devices allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions.
The separate control and data buses with independent row and column control yield over 95% bus efficiency.
The RDRAM device's 32 banks support up to four simultaneous transactions.
System oriented features for mobile, graphics and communications include power management and byte masking.
Direct RDRAM™ SEC 240 xCS8 K4R271669F Figure 1: Direct RDRAM CSP Package The 128Mbit RDRAM devices are offered in a horizontal center-bond fanout CSP package.
Key Timing Parameters/Part Numbers Speed Organization tRAC I/O (Row Bin Freq.
Access MHz Time) ns -CS8 -CS8 800 800 45 45 Features ♦ Highest sustained bandwidth per DRAM device - 1.
6 GB/s sustained data transfer rate - Separate control and data buses for maximized efficiency - Separate row and col...


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