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IRF6623

International Rectifier
Part Number IRF6623
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 95824B IRF6623 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Loss...
Datasheet PDF File IRF6623 PDF File

IRF6623
IRF6623

Overview
PD - 95824B IRF6623 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.
7 mm) Dual Sided Cooling Compatible Compatible with Existing Surface Mount Techniques HEXFET® Power MOSFET VDSS 20V RDS(on) max 5.
7mΩ@VGS = 10V 9.
7mΩ@VGS = 4.
5V Qg(typ.
) 11nC ST Applicable DirectFET Outline and Substrate Outline (see p.
8,9 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6623 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.
The IRF6623 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C EAS IAR TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Powe...


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