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IRF7805A

International Rectifier
Part Number IRF7805A
Manufacturer International Rectifier
Description N-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description PD – 91746C IRF7805/IRF7805A HEXFET® Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal...
Datasheet PDF File IRF7805A PDF File

IRF7805A
IRF7805A

Overview
PD – 91746C IRF7805/IRF7805A HEXFET® Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses S S S G 1 8 7 A D D D D 2 3 6 Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.
The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.
The IRF7805/IRF7805A offers maximum efficiency for mobile CPU core DC-DC converters.
4 5 SO-8 T o p V ie w Device Features IRF7805 IRF7805A Vds 30V 30V Rds(on) 11mΩ 11mΩ Qg 31nC 31nC Qsw 11.
5nC Qoss 36nC 36nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.
5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current TJ, TSTG IS ISM 2.
5 106 25°C 70°C IDM PD Symbol VDS VGS ID 13 10 100 2.
5 1.
6 –55 to 150 2.
5 106 °C A IRF7805 30 ±12 13 10 100 W A IRF7805A Units V Thermal Resistance Parameter Maximum Junction-to-Ambientƒ RθJA Max.
50 Units °C/W www.
irf.
com 1 10/10/00 IRF7805/IRF7805A Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-Source on Resistance* Drain-Source Leakage Current* V(BR)DSS RDS(on) 1.
0 30 150 IGSS Qg Q gs1 Q gs2 Qgd QSW Q oss Rg td(on) tr td (off) tf ±100 22„ 31„ 3.
7 1.
4 6.
8 8.
2 30 1.
7 16 20 38 16 11.
5 36 IRF7805 Min Typ Max 30 – 9.
2 – 11 1.
0 30 150 ±100 22„ 31„ 3.
7 1.
4 6.
8 8.
2 30 1.
7 16 20 38 16 ns 36 Ω VDD = 16V ID = 7A Rg = 2Ω VGS = 4.
5V Resistive Load Conditions IS = 7A‚, VGS = 0V di/dt = 700A/µs VDS = 16V, VGS = 0V, IS = 7A di/dt = 700A/µs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7A VDS = 16V, VGS = 0 nC nA IRF7805A Min Typ Max Units 30 – 9.
2 – 11 V mΩ V µA Conditions VGS = 0V, ID = 250µA VGS = 4.
5V, ID = 7A‚ VDS = VG...


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