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IRF7807

International Rectifier
Part Number IRF7807
Manufacturer International Rectifier
Description N-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description PD – 91747C IRF7807/IRF7807A HEXFET® Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal...
Datasheet PDF File IRF7807 PDF File

IRF7807
IRF7807

Overview
PD – 91747C IRF7807/IRF7807A HEXFET® Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses S S S G 1 8 7 A D D D D 2 3 6 Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.
The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.
A pair of IRF7807 devices provides the best cost/ performance solution for system voltages, such as 3.
3V and 5V.
4 5 SO-8 T o p V ie w Device Features IRF7807 IRF7807A Vds 30V 30V Rds(on) 25mΩ 25mΩ Qg 17nC 17nC Qsw 5.
2nC Qoss 16.
8nC 16.
8nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.
5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current TJ, TSTG IS ISM 2.
5 66 25°C 70°C IDM PD Symbol VDS VGS ID 8.
3 6.
6 66 2.
5 1.
6 –55 to 150 2.
5 66 °C A IRF7807 30 ±12 8.
3 6.
6 66 W A IRF7807A Units V Thermal Resistance Parameter Maximum Junction-to-Ambientƒ RθJA Max.
50 Units °C/W www.
irf.
com 1 10/10/00 IRF7807/IRF7807A Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-Source on Resistance* Gate Threshold Voltage* Drain-Source Leakage Current* V(BR)DSS RDS(on) VGS(th) IDSS 1.
0 30 150 IGSS Qg Q gs1 Q gs2 Qgd QSW Q oss Rg td(on) tr td (off) tf 12 2.
1 0.
76 2.
9 3.
66 14 1.
2 12 17 25 6 5.
2 16.
8 ±100 17 12 2.
1 0.
76 2.
9 3.
66 14 1.
2 12 17 25 6 ns 16.
8 Ω VDD = 16V ID = 7A Rg = 2Ω VGS = 4.
5V Resistive Load Conditions IS = 7A‚, VGS = 0V di/dt = 700A/µs VDS = 16V, VGS = 0V, IS = 7A di/dt = 700A/µs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7A VDS = 16V, VGS = 0 nC IRF7807 Min Typ Max 30 – 17 – 25 1.
0 30 150 ±100 17 nA IRF7807A Min Typ Max Units 30 – 17 – 25 V mΩ...


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