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IRG4PH40K

International Rectifier
Part Number IRG4PH40K
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Apr 25, 2005
Detailed Description PD - 91578B IRG4PH40K INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor contro...
Datasheet PDF File IRG4PH40K PDF File

IRG4PH40K
IRG4PH40K

Overview
PD - 91578B IRG4PH40K INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ.
= 2.
74V @VGE = 15V, IC = 15A n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBT's offer highest power density motor controls possible • This part replaces the IRGPH40K and IRGPH40M devices TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
1200 30 15 60 60 10 ±20 180 160 65 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1N•m) Units V A µs V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ.
––– 0.
24 ––– 6 (0.
21) Max.
0.
77 ––– 40 ––– Units °C/W g (oz) www.
irf.
com 1 2/7/2000 IRG4PH40K Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min.
Typ.
Max.
Units Collector-to-Emitter Breakdown Voltage 1200 — — V Emitter-to-Collector Breakdown Voltage T 18 — — V Temperature Coeff.
of Breakdown...


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