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IRG4PH40KD

International Rectifier
Part Number IRG4PH40KD
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Apr 25, 2005
Detailed Description PD- 91577B IRG4PH40KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circui...
Datasheet PDF File IRG4PH40KD PDF File

IRG4PH40KD
IRG4PH40KD

Overview
PD- 91577B IRG4PH40KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ.
= 2.
74V @VGE = 15V, IC = 15A n-ch an nel Benefits • Latest generation 4 IGBT's offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and switching losses • This part replaces the IRGPH40KD2 and IRGPH40MD2 products • For hints see design tip 97003 TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200 30 15 60 60 8.
0 130 10 ± 20 160 65 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1 N•m) Units V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min.
––– ––– ––– ––– ––– Typ.
––– ––– 0.
24 ––– 6 (0.
21) Max.
0.
77 1.
7 ––– 40 ––– Units °C/W g (oz) www.
irf.
com 1 2/7/2000 IRG4PH40KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ...


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