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IRG4PH40U

International Rectifier
Part Number IRG4PH40U
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Apr 25, 2005
Detailed Description PD - 91612C IRG4PH40U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies ...
Datasheet PDF File IRG4PH40U PDF File

IRG4PH40U
IRG4PH40U

Overview
PD - 91612C IRG4PH40U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and welding • Industry standard TO-247AC package C Ultra Fast Speed IGBT VCES = 1200V G E VCE(on) typ.
= 2.
43V @VGE = 15V, IC = 21A n-channel Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • Much lower conduction losses than MOSFETs • More efficient than short circuit rated IGBTs TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
1200 41 21 82 82 ± 20 270 160 65 -55 to + 150 300 (0.
063 in.
(1.
6mm) from case ) 10 lbf•in (1.
1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ.
––– 0.
24 ––– 6 (0.
21) Max.
0.
77 ––– 40 ––– Units °C/W g (oz) www.
irf.
com 1 7/7/2000 IRG4PH40U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min.
Typ.
Max.
Units Collector-to-Emitter Breakdown Voltage 1200 — — V Emitter-to-Collector Breakdown Voltage T 18 — — V Temperature Coeff.
of Breakdown Voltage — 0.
43 — V/°C — 2.
43 3.
1 Collector-to-Emitter Saturation Voltage — 2.
97 — V — 2.
47 — Gate Threshold...


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