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IRG4PH40S

International Rectifier
Part Number IRG4PH40S
Manufacturer International Rectifier
Description Standard Speed IGBT
Published Jan 9, 2015
Detailed Description PD -91808 INSULATED GATE BIPOLAR TRANSISTOR IRG4PH40S Standard Speed IGBT Features • Extremely low on state voltage d...
Datasheet PDF File IRG4PH40S PDF File

IRG4PH40S
IRG4PH40S

Overview
PD -91808 INSULATED GATE BIPOLAR TRANSISTOR IRG4PH40S Standard Speed IGBT Features • Extremely low on state voltage drop 1.
0V typical at 5.
0A • Extremely low VCE(on) variation from lot to lot • Industry standard TO-247AC package C G E N-channel VCES = 1200V VCE(on) typ.
= 1.
46V @VGE = 15V, IC = 20A Benefits • High current density systems • Optimized for specific application conditions • Lower voltage drop than many high voltage MOSFETs Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energyƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance RθJC RθCS RθJA Wt www.
irf.
com Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight TO-247AC Max.
1200 33 20 66 66 ±20 250 160 65 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1N•m) Units V A V mJ W °C Typ.
––– 0.
24 ––– 6.
0(0.
21) Max.
0.
77 ––– 40 ––– Units °C/W g (oz) 1 9/23/98 IRG4PH40S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage „ Temperature Coeff.
of Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Temperature Coeff.
of Threshold Voltage Forward Transconductance … Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min.
1200 18 — — — — 3.
0 — 17 — — — Typ.
Max.
Units Conditions — — V VGE = 0V, IC = 250µA — — V VGE = 0V, IC = 1.
0A 1.
23 — V/°C VGE = 0V, IC = 1.
0mA 1.
46 1.
75 IC = 20A VGE = 15V...


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