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M68732L

Mitsubishi
Part Number M68732L
Manufacturer Mitsubishi
Description SILICON MOS FET POWER AMPLIFIER
Published Apr 26, 2005
Detailed Description MITSUBISHI RF POWER MODULE M68732L SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING ...
Datasheet PDF File M68732L PDF File

M68732L
M68732L

Overview
MITSUBISHI RF POWER MODULE M68732L SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.
2 26.
6±0.
2 21.
2±0.
2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.
5±0.
1 1 5 1 2 3 4 4 5 0.
45 6±1 13.
7±1 18.
8±1 23.
9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.
5V, ZG=ZL=50Ω f=400-430MHz, ZG=ZL=50Ω f=400-430MHz, ZG=ZL=50Ω f=400-430MHz, ZG=ZL=50Ω Ratings 9.
2 4 70 10 -30 to +100 -40 to +110 Unit V V mW W °C °C Note.
Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd.
harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 400 7 45 Max 430 Unit MHz W % dBc - VDD=7.
2V, VGG=3.
5V, Pin=50mW ZG=50Ω, VDD=4-19.
2V, Load VSWR<4:1 VDD=9.
2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1 -25 4 No parasitic oscillation No degradation or destroy Note.
Above parameters, ratings, limits and test conditions are subject to change.
Nov.
´97 MITSUBISHI RF POWER MODULE M68732L SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS.
FREQUENCY 10 9 8 7 6 5 4 3 2 1 0 390 400 410 ρin 420 430 ηT VGG=3.
5V, VDD=7.
2V, Pin=17dBm PO 75 70 65 60 55 50 45 40 35 30 25 440 4 3 2 1 0 -10 -5 0 5 10 15 40 ηT;400MHz 30 ηT;430MHz 20 10 0 20 9 8 7 6 5 VGG=3.
5V, VDD=7.
2V PO;400MHz PO;430MHz OUTPUT POWER, TOTAL EFFICIENCY VS.
INPUT POWER 90 80 70 60 50 FREQUENCY f (MHz) INPUT POWER Pin (dBm) OUTPUT POWER, TOTAL EFFICIENCY VS.
GATE VOLTAGE 10 9 8 7 6 5 4 3 2 1 0 0 0.
5 1 1.
5 2 2.
5 3 3.
5 GATE VOLTAGE VGG (V) ηT;400MHz ηT;430MHz VDD=7.
2V, Pin=17dBm PO;400MHz P...


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