DatasheetsPDF.com

M68732H

Mitsubishi
Part Number M68732H
Manufacturer Mitsubishi
Description SILICON MOS FET POWER AMPLIFIER
Published Apr 26, 2005
Detailed Description MITSUBISHI RF POWER MODULE M68732H SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING ...
Datasheet PDF File M68732H PDF File

M68732H
M68732H

Overview
MITSUBISHI RF POWER MODULE M68732H SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.
2 26.
6±0.
2 21.
2±0.
2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.
5±0.
1 1 5 1 2 3 4 4 5 0.
45 6±1 13.
7±1 18.
8±1 23.
9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.
5V, ZG=ZL=50Ω f=450-470MHz, ZG=ZL=50Ω f=450-470MHz, ZG=ZL=50Ω f=450-470MHz, ZG=ZL=50Ω Ratings 9.
2 4 70 10 -30 to +100 -40 to +110 Unit V V mW W °C °C Note.
Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd.
harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 450 7 43 Max 470 Unit MHz W % dBc - VDD=7.
2V, VGG=3.
5V, Pin=50mW ZG=50Ω, VDD=4-9.
2V, Load VSWR<4:1 VDD=9.
2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1 -25 4 No parasitic oscillation No degradation or destroy Note.
Above parameters, ratings, limits and test conditions are subject to change.
Nov.
´97 MITSUBISHI RF POWER MODULE M68732H SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS.
FREQUENCY 10 9 8 7 6 5 4 3 2 1 0 440 450 ρin 460 470 ηT VGG=3.
5V, VDD=7.
2V, Pin=17dBm PO 70 65 60 55 50 45 40 35 30 25 20 480 4 3 2 1 0 -10 -5 0 5 ηT;450MHz ηT;470MHz 40 30 20 10 0 20 9 8 7 6 5 VGG=3.
5V, VDD=7.
2V PO;450MHz PO;470MHz OUTPUT POWER, TOTAL EFFICIENCY VS.
INPUT POWER 90 80 70 60 50 10 15 FREQUENCY f (MHz) INPUT POWER Pin (dBm) OUTPUT POWER, TOTAL EFFICIENCY VS.
GATE VOLTAGE 10 9 8 7 6 5 4 3 2 1 0 0 0.
5 1 1.
5 2 2.
5 3 3.
5 GATE VOLTAGE VGG (V) ηT;450MHz ηT;470MHz VDD=7.
2V, Pin=17dBm PO;450MHz PO;4...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)