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NTE2526

NTE
Part Number NTE2526
Manufacturer NTE
Description Silicon Complementary Transistors
Published May 9, 2005
Detailed Description NTE2526 (NPN) & NTE2527 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector–Emitter Sa...
Datasheet PDF File NTE2526 PDF File

NTE2526
NTE2526

Overview
NTE2526 (NPN) & NTE2527 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector–Emitter Saturation Voltage D High Current and High fT D Excellent Linearity of hFE D Fast Switching Time Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO .
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120V Collector Emitter Voltage, VCEO .
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100V Emitter Base Voltage, VEBO .
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6V Collector Current, IC Continuous .
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4A Pulse .
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8A Collector Power Dissipation, PC TA = +25°C .
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1W TC = +25°C .
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20W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain–Bandwidth Product NTE2526 NTE2527 Output Capacitance NTE2527 NTE2526 Cob VCB = 10V, f = 1MHz Symbol ICBO IEBO hFE fT Test Conditions VCB = 100V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 500mA VCE = 5V, IC = 3A VCE = 10V, IC = ...


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