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NTE2557

Part Number	NTE2557
Manufacturer	NTE
Description	Silicon NPN Transistor
Published	May 9, 2005
Detailed Description	NTE2557 Silicon NPN Transistor Darlington, High Voltage Switch, Power Amp Absolute Maximum Ratings: Collector–Base Volta...
Datasheet	NTE2557 PDF File

Overview

NTE2557 Silicon NPN Transistor Darlington, High Voltage Switch, Power Amp Absolute Maximum Ratings: Collector–Base Voltage, VCBO .
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200V Collector–Emitter Voltage, VCEO .
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200V Emitter–Base Voltage, VEBO .
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7V Collector Current, IC Continuous .
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15A Peak .
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22A Base Current, IB Continuous .
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1A Peak .
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2A Total Transistor Dissipation (TC = +25°C), PT .
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100W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Thermal Resistance, Junction–to–Case, RthJC .
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1.
25°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Transistion Frequency Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Turn–On Time Storage Time Fall Time Symbol ICBO ICEO IEBO hFE fT VCE(sat) VB...

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