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NTE2559

Part Number	NTE2559
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	May 9, 2005
Detailed Description	NTE2559 (NPN) & NTE2560 (PNP) Silicon Complementary Transistors Darlington, Motor/Relay Driver Absolute Maximum Ratings:...
Datasheet	NTE2559 PDF File

Overview

NTE2559 (NPN) & NTE2560 (PNP) Silicon Complementary Transistors Darlington, Motor/Relay Driver Absolute Maximum Ratings: Collector–Base Voltage, VCBO .
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120V Collector–Emitter Voltage, VCEO .
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120V Emitter–Base Voltage, VEBO .
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6V Collector Current, IC Continuous .
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16A Pulsed .
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26A Base Current, IB .
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1A Collector Dissipation (TFL = +25°C), PD .
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3W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Symbol ICBO IEBO hFE VCE(sat) VBE(sat) Test Conditions VCB = 120V, IE = 0 VEB = 6V, IC = 0 VCE = 4V, IC = 8A IC = 8A, IB = 16mA IC = 8A, IB = 16mA Min – – 120 2000 – – Typ – – – – – – Max 10 10 – – 1.
5 2.
5 V V Unit µA mA V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞ Note 1.
For NTE2560, the polarity is reversed.
NTE2559 (NPN) NTE25...

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