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AOD450

Alpha & Omega Semiconductors
Part Number AOD450
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 20, 2006
Detailed Description www.DataSheet4U.com AOD450 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD450 uses advan...
Datasheet PDF File AOD450 PDF File

AOD450
AOD450

Overview
www.
DataSheet4U.
com AOD450 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in inverter, load switching and general purpose applications.
Standard product AOD450 is Pb-free (meets ROHS & Sony 259 specifications).
AOD450L is a Green Product ordering option.
AOD450 and AOD450L are electrically identical.
TO-252 D-PAK Features VDS (V) = 200V ID = 3.
8A RDS(ON) <0.
7Ω (VGS = 10V) 193 18 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C C Maximum 200 ±30 3.
8 2.
7 10 3 6 25 12.
5 2.
1 1.
3 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=1.
35mH Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 17.
1 50 4 Max 30 60 6 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOD450 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=160V, VGS=0V TJ=55°C VDS=0V, VGS=±30V VDS=VGS, ID=250µA VGS=10V, VDS=15V VGS=10V, ID=3.
8A TJ=125°C VDS=15V, ID=3.
8A 3 10 0.
55 1.
1 8.
7 0.
8 1 6 215 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 32 7.
2 5.
5 3.
82 VGS=10V, VDS=25V, ID=3.
8A 0.
92 1.
42 1.
47 6.
3 VGS=10V, VDS=25V, RL=6.
5Ω, RGEN=3Ω IF=3.
8A, dI/dt=100A/µs 3.
3 10.
5 2.
8 59 142 0.
70 1.
32 5 Min 200 1 5 100 6 Typ Max Units V µA nA V A Ω S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Volta...


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