DatasheetsPDF.com

AOD452

Alpha & Omega Semiconductors
Part Number AOD452
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 20, 2006
Detailed Description www.DataSheet4U.com AOD452 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD452 uses advan...
Datasheet PDF File AOD452 PDF File

AOD452
AOD452

Overview
www.
DataSheet4U.
com AOD452 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and general purpose applications.
Standard product AOD452 is Pb-free (meets ROHS & Sony 259 specifications).
AOD452L is a Green Product ordering option.
AOD452 and AOD452L are electrically identical.
TO-252 D-PAK Features VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.
5 mΩ (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 4.
5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 55 55 100 30 135 50 25 3 2.
1 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.
1mH Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14.
2 39 2.
5 Max 20 50 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOD452, AOD452L Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance VDS=5V, ID=10A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 1 100 6.
5 9.
7 11.
5 35 0.
72 1 55 1230 VGS=0V, VDS=12.
5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 315 190 1.
2 26.
4 VGS=10V, VDS=12.
5V, ID=20A 13.
5 3.
9 7.
75 6.
5 VGS=10V, VDS=12.
5V, RL=0.
6Ω, RGEN=3Ω IF=20A, dI/dt=100A/µs 10 22.
7 6.
2 23.
06 15.
25 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)