DatasheetsPDF.com

AOD454

Alpha & Omega Semiconductors
Part Number AOD454
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 20, 2006
Detailed Description AOD454 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454 uses advanced trench technolog...
Datasheet PDF File AOD454 PDF File

AOD454
AOD454

Overview
AOD454 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and general purpose applications.
-RoHS Compliant -Halogen Free* Top View D TO-252 D-PAK Bottom View Features VDS (V) = 40V ID = 12 A (VGS = 10V) RDS(ON) < 33 mΩ (VGS = 10V) RDS(ON) < 47 mΩ (VGS = 4.
5V) 100% UIS Tested! 100% Rg Tested! D GS SG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.
1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G S Maximum 40 ±20 12 10 30 12 20 50 25 2 1.
3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 17.
4 50 2.
3 Max 30 60 3 Units V V A A mJ W W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AOD454 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=10mA, VGS=0V VDS=32V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=12A Forward Transconductance Diode Forward Voltage VGS=4.
5V, ID=6A VDS=5V, ID=12A IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C 40 1.
8 30 V 1 µA 5 ±100 nA 2.
3 3 V A 25 33 mΩ 39 52 34 47 mΩ 25 S 0.
76 1 V 12 A DYNAMIC PARAMETERS Ciss Input Capaci...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)