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AOD456

Alpha & Omega Semiconductors
Part Number AOD456
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 20, 2006
Detailed Description www.DataSheet4U.com AOD456 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD456 uses advan...
Datasheet PDF File AOD456 PDF File

AOD456
AOD456


Overview
www.
DataSheet4U.
com AOD456 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD456 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and general purpose applications.
Standard product AOD456 is Pb-free (meets ROHS & Sony 259 specifications).
AOD456L is a Green Product ordering option.
AOD456 and AOD456L are electrically identical.
TO-252 D-PAK Features VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <6 mΩ (VGS = 10V) RDS(ON) <10 mΩ (VGS = 4.
5V) 193 18 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 50 50 150 30 45 50 25 3 2.
1 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.
1mH Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 2.
1 Max 20 50 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOD456 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125°C VGS=4.
5V, ID=20A gFS VSD IS Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current 1 100 5 7.
3 8 45 0.
74 1 50 1850 VGS=0V, VDS=12.
5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 472 275 0.
86 31.
7 VGS=10V, VDS=12.
5V, ID=20A 15.
7 5.
8 8.
2 7.
5 VGS=10V, VDS=12.
5V, RL=0.
625Ω, RGEN=3Ω IF=20A, dI/dt=100A/µs 14 30 11.
5 30.
9 20.
3 37 1.
5 38 19 2220 10 S V A pF pF pF Ω nC nC nC nC ns ns ns ...



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