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BCP51

Fairchild Semiconductor
Part Number BCP51
Manufacturer Fairchild Semiconductor
Description PNP General Purpose Amplifier
Published Apr 23, 2007
Detailed Description BCP51 BCP51 PNP General Purpose Amplifier • This device is designed for general purpose medium power amplifiers and swi...
Datasheet PDF File BCP51 PDF File

BCP51
BCP51

Overview
BCP51 BCP51 PNP General Purpose Amplifier • This device is designed for general purpose medium power amplifiers and switches requiring collecor currents to 1.
0A.
• Sourced from process 77.
4 3 2 1 SOT-223 1.
Base 2.
Collector 3.
Emitter Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -45 -45 -5.
0 -1.
5 - 55 ~ 150 Units V V V A °C * These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
NOTES: 1.
These ratings are based on a maximum junction temperature of 150 degrees C.
2.
These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
www.
DataSheet4U.
com Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Condition IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -10µA, IC = 0 VCB = -30V, IE = 0 VCB = -30V, IE = 0, Ta = 125°C VEB = -5.
0V, IC = 0 IC = -5.
0mA, VCE = -2.
0V IC = -150mA, VCE = -2.
0 IC = -500mA, VCE = -2.
0V IC = -500mA, IB = -50mA IC = -500mA, VCE = -2.
0V 25 40 25 Min.
-45 -45 -5.
0 -100 -10 -10 Max.
Units V V V nA µA µA Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cut-off Current DC Current Gain On Characteristics 250 -0.
5 -1.
0 V V VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max.
1.
0 8.
0 125 Units W mW/°C °C/W * Device mounted on FR-4PCB 36mm × 18mm × 1.
5mm; mounting pad for the collector lead min.
6cm2.
©2004 Fairchild Semiconductor Corporation Rev.
A, August...


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