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CEB02N9

CET
Part Number CEB02N9
Manufacturer CET
Description N-Channel MOSFET
Published Sep 29, 2015
Detailed Description CEP02N9/CEB02N9 CEF02N9 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP02N9 CEB02N...
Datasheet PDF File CEB02N9 PDF File

CEB02N9
CEB02N9

Overview
CEP02N9/CEB02N9 CEF02N9 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP02N9 CEB02N9 CEF02N9 VDSS 900V 900V 900V RDS(ON) 6.
8Ω 6.
8Ω 6.
8Ω ID 2.
6A 2.
6A 2.
6A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage VDS 900 VGS ±30 Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C ID IDM e PD 2.
6 1.
9 10.
4 125 0.
83 2.
6 d 1.
9 d 10.
4 d 47 0.
3 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
2 62.
5 ...


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