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CEB02N7G

CET
Part Number CEB02N7G
Manufacturer CET
Description N-Channel MOSFET
Published Sep 29, 2015
Detailed Description CEP02N7G/CEB02N7G CEF02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N7G CEB02N7G CEF02N7G...
Datasheet PDF File CEB02N7G PDF File

CEB02N7G
CEB02N7G

Overview
CEP02N7G/CEB02N7G CEF02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N7G CEB02N7G CEF02N7G VDSS 700V 700V 700V RDS(ON) 6.
75Ω 6.
75Ω 6.
75Ω ID 2A 2A 2A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 TO-220F VDS 700 VGS ±30 ID 2 2d 1.
3 1.
3 d IDM e 8 8d 60 33 PD 0.
48 0.
26 EAS 11.
25 IAS 1.
5 TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
1 62.
5 3.
9 65 Units V V A A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice .
1 Rev 3.
2011.
Jan http://www.
cet-mos.
com CEP02N7G/CEB02N7G CEF02N7G Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 1A Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c gFS Ciss Coss Crss VDS = 50V, ID = 1A VDS = 25V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off...


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