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SPP1013

SYNC POWER
Part Number SPP1013
Manufacturer SYNC POWER
Description P-Channel MOSFET
Published Sep 11, 2007
Detailed Description SPP1013 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1013 is the P-Channel enhancement mode power field effect ...
Datasheet PDF File SPP1013 PDF File

SPP1013
SPP1013

Overview
SPP1013 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS  Drivers : Relays/Solenoids/Lamps/Hammers  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers FEATURES  P-Channel -20V/0.
45A,RDS(ON)=0.
52Ω@VGS=-4.
5V -20V/0.
35A,RDS(ON)=0.
70Ω@VGS=-2.
5V -20V/0.
25A,RDS(ON)=0.
95Ω@VGS=-1.
8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-523 (SC-89) package design PIN CONFIGURATION( SOT-523 / SC-89 ) PART MARKING 2020/04/15 Ver.
4 Page 1 SPP1013 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPP1013S52RGB SOT-523 ※ SPP1013S52RGB : Tape Reel ; Pb – Free, Halogen – Free Part Marking Y ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate –Source Voltage VGSS ±12 V TA=25℃ -0.
45 Continuous Drain Current(TJ=150℃) ID A TA=80℃ -0.
35 Pulsed Drain Current IDM -1.
0 A Continuous Source Current(Diode Conduction) IS -0.
3 A Power Dissipation TA=25℃ 0.
27 PD W TA=70℃ 0.
16 Operating Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ 2020/04/15 Ver.
4 Page 2 SPP1013 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold V...


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