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SPP1015

SYNC POWER
Part Number SPP1015
Manufacturer SYNC POWER
Description P-Channel MOSFET
Published May 22, 2014
Detailed Description SPP1015 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1015 is the P-Channel enhancement mode power field effect ...
Datasheet PDF File SPP1015 PDF File

SPP1015
SPP1015

Overview
SPP1015 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1015 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS  Drivers : Relays/Solenoids/Lamps/Hammers  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers FEATURES  P-Channel -20V/0.
45A,RDS(ON)=520mΩ@VGS=-4.
5V -20V/0.
35A,RDS(ON)=700mΩ@VGS=-2.
5V -20V/0.
25A,RDS(ON)=1500mΩ@VGS=-1.
8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  ESD protected  SOT-523 (SC-89) package design PIN CONFIGURATION (SOT-523 / SC-89) PART MARKING 2020/04/15 Ver.
5 Page 1 SPP1015 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPP1015S52RGB SOT-523 ※ SPP1015S52RGB : Tape Reel ; Pb – Free, Halogen – Free Part Marking 5Y ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient T ≤ 10sec Steady State VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -20 ±12 -1.
0 -0.
7 -3 -0.
6 0.
35 0.
19 -55/150 -55/150 360 400 Unit V V A A A W ℃ ℃ ℃/W 2020/04/15 Ver.
5 Page 2 SPP1015 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol C...


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