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2SC5930

Part Number	2SC5930
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Triple Diffused Type Transistor
Published	May 6, 2008
Detailed Description	2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC5930 High-Speed and High-Voltage Switching...
Datasheet	2SC5930 PDF File

Overview

2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High-speed switching: tf = 0.
3 μs (max) (IC = 0.
3 A) Unit: mm com Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 600 285 7 1.
0 2.
0 0.
5 1.
0 150 −55 to 150 Unit V V V V A A W °C °C JEDEC JEITA TOSHIB...

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