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CGH40010

Part Number	CGH40010
Manufacturer	Cree
Description	RF Power GaN HEMT
Published	Aug 18, 2008
Detailed Description	PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobili...
Datasheet	CGH40010 PDF File

Overview

PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits.
www.
DataSheet4U.
com The transistor is available in both screw-down, flange and solderdown, pill packages.
Package Type s: 440166, & 440196 PN’s: CGH40 010F & CGH 40010P FEATURES • • • • • • Up to 4 GHz Operation 16 dB Small Signal Gain at 2.
0 GHz 14 dB Small Signal Gain a...

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