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CGH40025

Cree
Part Number CGH40025
Manufacturer Cree
Description RF Power GaN HEMT
Published Apr 19, 2016
Detailed Description CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transisto...
Datasheet PDF File CGH40025 PDF File

CGH40025
CGH40025


Overview
CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits.
The transistor is available in a screw-down, flange package and solder-down, pill packages.
PPacNk:aCgGeHT4y0p0e2: 454P0a1n9d6CaGndH4404002156F6 FEATURES • Up to 6 GHz Operation • 15 dB Small Signal Gain at 2.
0 GHz • 13 dB Small Signal Gain at 4.
0 GHz • 30 W typical PSAT • 62 % Efficiency at PSAT • 28 V Operation APPLICATIONS • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastructure • Test Instrumentation • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Rev 4.
0 – May 2015 Subject to change without notice.
www.
cree.
com/w...



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