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CGH40045

Part Number	CGH40045
Manufacturer	Cree
Description	GaN HEMT
Published	Aug 18, 2008
Detailed Description	PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobili...
Datasheet	CGH40045 PDF File

Overview

PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and compressed amplifier circuits.
www.
DataSheet4U.
com The transistor is available in a flange package.
Package Type s: 440193 PN: CGH4004 5F FEATURES • • • • • • Up to 4 GHz Operation >16 dB Small Signal Gain at 2.
0 GHz 12 dB Small Signal Gain at 4.
0 GHz 55 W Typical P3dB 55 % Efficiency at P3dB 28 V Oper...

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