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AO4408

Alpha & Omega Semiconductors
Part Number AO4408
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 1, 2008
Detailed Description AO4408 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4408/L uses advanced trench technol...
Datasheet PDF File AO4408 PDF File

AO4408
AO4408

Overview
AO4408 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4408/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching.
This device makes an excellent high side switch for notebook CPU core DC-DC conversion.
AO4408 and AO4408L are electrically identical.
-RoHS Compliant -AO4408L is Halogen Free Features VDS (V) = 30V ID = 12A (VGS = 10V) RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.
5V) UIS Tested Rg,Ciss,Coss,Crss Tested SD SD SD GD SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive Avalanche Energy B L=0.
3mH ID IDM IAV EAV Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 12 10 80 30 135 3 2.
1 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 23 48 12 Max 40 65 16 Alpha & Omega Semiconductor, Ltd.
Units V V A A mJ W °C Units °C/W °C/W °C/W www.
aosmd.
com AO4408 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=12A VGS=4.
5V, ID=10A Forward Transconductance VDS=5V, ID=10A Diode Forward Voltage IS=10A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C 30 1 40 30 1.
5 10.
5 16 13 48 0.
76 1 5 100 2.
5 14 21 16.
5 1 4.
5 V µA nA V A mΩ mΩ S V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss...


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