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AO4423

Alpha & Omega Semiconductors
Part Number AO4423
Manufacturer Alpha & Omega Semiconductors
Description 30V P-Channel MOSFET
Published Dec 1, 2008
Detailed Description Rev 4: May 2005 AO4423 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provi...
Datasheet PDF File AO4423 PDF File

AO4423
AO4423


Overview
Rev 4: May 2005 AO4423 P-Channel Enhancement Mode Field Effect Transistor General Description www.
DataSheet4U.
com provide Features VDS (V) = -30V ID = -15A RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.
5mΩ (VGS = -10V) ESD Rating: 6000V HBM The AO4423 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protected.
AO4423L (Green Product) is offered in a lead-free package.
AO4423 is Pb-free (meets ROHS & Sony 259 specifications).
AO4423L is a Green Product ordering option.
AO4423 and AO4423L are electrically identical.
SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±25 -15 -12.
1 -80 3.
1 2 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 26 50 14 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4423, AO4423L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) www.
DataSheet4U.
com Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-20V, ID=-15A TJ=125°C VGS=-10V, ID=-15A VGS=-6V, ID=-10A Min -30 Typ Max Units V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -100 -500 ±1 ±10 -2 -80 -2.
7 5.
7 7.
1 6.
8 9.
4 43 -0.
71 -3.
5 7 8.
6 8.
5 12 -1 -4.
2 nA µA µA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC ID(ON) RDS(ON) Static Drain-Sour...



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