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AO4425

Alpha & Omega Semiconductors
Part Number AO4425
Manufacturer Alpha & Omega Semiconductors
Description P-Channel FET
Published Dec 1, 2008
Detailed Description AO4425 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS ...
Datasheet PDF File AO4425 PDF File

AO4425
AO4425

Overview
AO4425 P-Channel Enhancement Mode Field Effect Transistor General Description www.
DataSheet4U.
com provide Features VDS (V) = -38V ID = -14A (VGS = -20V) RDS(ON) < 10mΩ (VGS = -20V) RDS(ON) < 11mΩ (VGS = -10V) ESD Rating: 4000V HBM The AO4425 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protected.
Standard Product AO4425 is Pb-free (meets ROHS & Sony 259 specifications).
AO4425L is a Green Product ordering option.
AO4425 and AO4425L are electrically identical.
SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -38 ±25 -14 -11 -50 3.
1 2 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 26 50 14 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4425 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250 µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=0V, VGS=±25V VDS=VGS ID=-250 µA VGS=-10V, VDS=-5V VGS=-20V, I D=-14A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-10V, I D=-14A Forward Transconductance VDS=-5V, ID=-14A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C -2 -50 7.
7 11 8.
8 43 0.
71 1 4.
2 3800 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 560 350 7.
5 63 VGS=-10V, VDS=-20V, I D=-14A 14.
1 16.
1 12.
4 VGS=-10V, VDS=-20V, RL=1.
35 Ω, RGEN=3Ω IF=-14A, dI/dt=100A/ µs IF=-14A, dI/dt=100A/ µs 9.
2 97.
5 45.
5 35 33 10 13.
5 11 -2.
5 Min -38 -100 -500 ±1 ±10 -3.
5 Typ Max Units...


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