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AO4464

Alpha & Omega Semiconductors
Part Number AO4464
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 1, 2008
Detailed Description AO4464 N-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS ...
Datasheet PDF File AO4464 PDF File

AO4464
AO4464

Overview
AO4464 N-Channel Enhancement Mode Field Effect Transistor General Description www.
DataSheet4U.
com provide Features VDS (V) = 30V ID = 8.
5A (VGS = 10V) RDS(ON) < 26mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.
5V) The AO4464 uses advanced trench technology to excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Standard Product AO4464 is Pb-free (meets ROHS & Sony 259 specifications).
AO4464L is a Green Product ordering option.
AO4464 and AO4464L are electrically identical.
D S S S G D D D D G SOIC-8 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25°C TA=70°C ID IDM PD TJ, TSTG Maximum 30 ±20 8.
5 7.
1 50 3 2.
1 -55 to 150 Units V V A W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4464 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=8.
5A Static Drain-Source On-Resistance VGS=4.
5V, ID=5A gFS VSD IS Forward Transconductance VDS=5V, ID=5A 10 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 1 20 20 29.
2 31 17 0.
76 1 4.
3 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 3 13.
84 VGS=10V, VDS=15V, ID=8.
5A 6.
74 1.
84 3.
32 4.
5 VGS=10V, VDS=15V, RL=1.
8Ω, RGEN=3Ω IF=8.
5A, dI/dt=100A/µs 4.
2 20.
1 4.
9 17.
2 8.
6 6.
5 6.
3 30 7.
5 21 10 3.
6 17 8.
1 820 26 38 40 1.
7 Min 30 0.
004 1 5 100 3 Typ Max Units V µA nA V...


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