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2SC4742

Part Number	2SC4742
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Mar 3, 2009
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4742 DESCRIPTION ·High Breakdown Voltage- : VCES= 1500V (Mi...
Datasheet	2SC4742 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4742 DESCRIPTION ·High Breakdown Voltage- : VCES= 1500V (Min) ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 6 A IC(peak) Collector Current-Peak 7 A IC(surge) Collector Current-Surge 16 A ID C-E Diode Forward Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Tem...

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