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2SD2560

Part Number	2SD2560
Manufacturer	SavantIC
Description	SILICON POWER TRANSISTOR
Published	May 8, 2009
Detailed Description	SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2560 www.datasheet4u.com D...
Datasheet	2SD2560 PDF File

Overview

SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2560 www.
datasheet4u.
com DESCRIPTION ·With TO-3PN package ·Complement to type 2SB1647 APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.
1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 15 1 130 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=0 IC=10A ;IB=10mA IC=10A ;IB=10mA VCB=150V ;IE=0 VEB=5V; IC=0 IC=10A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 5000 120 70 MIN 150 TYP.
www.
datasheet4u.
com 2SD2560 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Cob fT MAX UNIT V 2.
5 3.
0 100 100 V V µA µA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=10A;RL=4B IB1=-IB2=10mA VCC=40V 0.
8 4.
0 1.
2 µs µs µs hFE Classifications O 5000-12000 P 6500-20000 Y 15000-30000 2 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE www.
datasheet4u.
com 2SD2560 Fig.
2 outline dimensions (unindicated tolerance:±0.
1mm) 3 ...

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