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AOD452A

Alpha & Omega Semiconductors
Part Number AOD452A
Manufacturer Alpha & Omega Semiconductors
Description N-Channel SDMOSTM POWER Transistor
Published May 15, 2009
Detailed Description AOD452A TM www.datasheet4u.com N-Channel SDMOS POWER Transistor General Description The AOD452A/L is fabricated with SDM...
Datasheet PDF File AOD452A PDF File

AOD452A
AOD452A

Overview
AOD452A TM www.
datasheet4u.
com N-Channel SDMOS POWER Transistor General Description The AOD452A/L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.
The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
AOD452A and AOD452AL are electrically identical.
-RoHS Compliant -AOD452AL is Halogen Free TO-252 D-PAK Features VDS (V) = 25V ID = 55A RDS(ON) < 8mΩ RDS(ON) <14mΩ (V GS = 10V) (V GS = 10V) (V GS = 4.
5V) 100% UIS Tested! 100% Rg Tested! Top View D Bottom View D S G S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 55 43 120 120 35 31 50 25 2.
5 1.
6 -55 to 175 Units V V TC=25°C TC=100°C ID IDM ISM IAR EAR PD PDSM TJ, TSTG TC=25°C A Pulsed Forward Diode CurrentC Repetitive avalanche energy L=50µH Power Dissipation B Power Dissipation A mJ W W °C TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case B Maximum Junction-to-TAB B Symbol A A t ≤ 10s Steady-State Steady-State Steady-State RθJA RθJC RθJC-TAB Typ 14.
2 39 2.
5 2.
7 Max 20 50 3 3.
2 Units °C/W °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AOD452A Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage www.
datasheet4u.
com IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance VDS=5V, ID=30A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 990 VGS=0V, VDS=12.
5V,...


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