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AOD454A

Alpha & Omega Semiconductors
Part Number AOD454A
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Oct 24, 2015
Detailed Description AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench techno...
Datasheet PDF File AOD454A PDF File

AOD454A
AOD454A

Overview
AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.
-RoHS Compliant -Halogen Free* Top View TO252 DPAK Bottom View D D Features VDS (V) = 40V ID = 20A (VGS = 10V) RDS(ON) < 30mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.
5V) 100% UIS Tested! 100% Rg Tested! D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,H TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.
1mH C ID IDM IAR EAR Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 20 15 40 14 9.
8 37 18 2.
5 1.
6 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Junction-to-Ambient A,G Maximum Junction-to-Case F t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16.
7 40 3 Max 25 50 4 Units V V A mJ W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AOD454A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance ID=250µA, VGS=0V VDS=40V, VGS=0V VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=12A VGS=4.
5V, ID=8A TJ=55°C TJ=125°C 40 1.
7 40 V 1 µA 5 ±100 nA 2.
5 3 V A 24 30 37 46 mΩ 30 40 gFS Forward Transconductance VSD Diode Forward Voltage VDS=5V, ID=12A IS=1A,VGS=0V 25 0.
76 1 S V IS Maximum Body-Diode Continuous Curr...


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