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ST3407

Stanson Technology
Part Number ST3407
Manufacturer Stanson Technology
Description P Channel Enhancement Mode MOSFET
Published Oct 14, 2009
Detailed Description www.DataSheet4U.com ST3407 P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407 is the P-Channel logic enhanceme...
Datasheet PDF File ST3407 PDF File

ST3407
ST3407

Overview
www.
DataSheet4U.
com ST3407 P Channel Enhancement Mode MOSFET -3.
6A DESCRIPTION ST3407 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L FEATURE � 3 D G 1 S 2 � � � � -30V/-4.
0A, RDS(ON) = 60mΩ @VGS = -10V -30V/-3.
2A, RDS(ON) = 80mΩ @VGS = -4.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 1.
Gate 2.
Source 3.
Drain PART MARKING SOT-23-3L 3 A7YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number ST3407S23RG Package SOT-23-3L Part Marking A7YA ※ Process Code : A ~ Z ; a ~ z ※ ST3407S23RG S 23: SOT-23-3L ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com ST3407 2006.
V1 www.
DataSheet4U.
com ST3407 P Channel Enhancement Mode MOSFET -3.
6A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -30 ±20 -3.
6 -3.
0 -15 -1.
0 1.
25 0.
8 150 -55/150 120 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com ST3407 2006.
V1 www.
DataSheet4U.
com ST3407 P Channel Enhancement Mode MOSFET -3.
6A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless oth...


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