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BUZ31

Comset Semiconductors
Part Number BUZ31
Manufacturer Comset Semiconductors
Description Power MOS Transistors
Published Dec 11, 2012
Detailed Description SEMICONDUCTORS BUZ31 POWER MOS TRANSISTORS FEATURE • • • • • Nchannel Enhancement mode Avalanche-rated TO-220 envelope ...
Datasheet PDF File BUZ31 PDF File

BUZ31
BUZ31

Overview
SEMICONDUCTORS BUZ31 POWER MOS TRANSISTORS FEATURE • • • • • Nchannel Enhancement mode Avalanche-rated TO-220 envelope Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol VDS IDS IDM IAR EAR EAS VGS RDS(on) PT tJ tstg Ratings http://www.
DataSheet4U.
net/ Value 200 14.
5 58 14.
5 9 200 20 0.
2 95 -55 to +150 -55 to +150 Unit V A Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Periodic Limited by Tjmax Avalanche Energy, Single pulse ID = 14.
5 A, VDD = 50 V, RGS = 25 Ω L = 1.
42 mH, Tj = 25°C Gate-Source Voltage Drain-Source on Resistance Power Dissipation at Case Temperature TC= 25°C Operating Temperatu...


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