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2SA1193K

Hitachi Semiconductor
Part Number 2SA1193K
Manufacturer Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Published Mar 22, 2005
Detailed Description 2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Col...
Datasheet PDF File 2SA1193K PDF File

2SA1193K
2SA1193K

Overview
2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1.
Emitter 2.
Collector 3.
Base 1 3 2 1 2SA1193(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –60 –60 –7 –0.
5 –1.
0 0.
9 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 — — 2000 — — — — Typ — — — — — — 0.
3 0.
9 Max — –1.
0 –1.
0 — –1.
5 –2.
0 — — V V µs µs I C = –250 mA I B1 = –IB2 = –0.
5 mA Unit V µA µA Test conditions I C = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IC = 0 VCE = –3 V, IC = –250 mA*1 I C = –250 mA, IB = –0.
5 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1.
Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) t on t off 2 2SA1193(K) Maximum Collector Dissipation Curve 0.
9 Collector power dissipation PC (W) Collector current IC (A) –3 –1.
0 0.
6 –0.
3 –0.
1 –0.
03 –0.
01 –0.
003 –3 iC (peak) IC max Area of Safe Operation PW t ho 1 s hot s ot ms ms 1 1 sh ms = 1W = 10 00 P =1 PW Ta = 25°C 0.
3 0 50 100 150 Ambient Temperature Ta (°C) –10 –30 –100 –300 Collector to Emiter Voltage VCE (V) Typical Output Characteristics –500 Collector current IC (mA) 00 –1 –80 0 –6 DC Current Transfer Ratio vs.
Collector Current 100,000 DC Current transfer ratio hFE 30,000 10,000 3,000 1,000 300 100 –10 VCE = –3 V Pulse –30 –100 –300 Collector Current IC (mA) –1,000 Ta = 75 °C 25 °C –400 –40 –300 P C = –20 0.
9W –200 –10 –100 –5 µA IB = 0 0 –2 –4 –6 –8 –10 Collector to Emitter Voltage VCE (V) 3 2SA1193(K) Saturation Voltage vs.
Collector Current Collector to emitter saturation voltage VCE(sat) (V) ...


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