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AO4409

Alpha & Omega Semiconductors
Part Number AO4409
Manufacturer Alpha & Omega Semiconductors
Description 30V P-Channel MOSFET
Published Dec 1, 2013
Detailed Description AO4409 30V P-Channel MOSFET General Description Product Summary The AO4409 uses advanced trench technology to provide...
Datasheet PDF File AO4409 PDF File

AO4409
AO4409

Overview
AO4409 30V P-Channel MOSFET General Description Product Summary The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.
5V) * RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested -30V -15A < 7.
5mΩ < 12mΩ Top View D D D D SOIC-8 Bottom View G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.
3mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G Maximum -30 ±20 -15 -12.
8 -80 30 135 3.
1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev.
8.
0: July 2013 www.
aosmd.
com Page 1 of 5 AO4409 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS= ±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-15A VGS=-4.
5V, ID=-10A Forward Transconductance VDS=-5V, ID=-15A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C -30 -1.
4 -80 35 -5 -25 ±100 -1.
9 -2.
7 6.
2 8.
2 9.
5 50 -0.
71 7.
5 11.
5 12 -1 -5 V µA nA V A mΩ mΩ S V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capa...


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