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NTE2527

Part Number	NTE2527
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	Nov 17, 2014
Detailed Description	NTE2526 (NPN) & NTE2527 (PNP) Silicon Complementary Transistors High Current Switch TO251 Features: D Low Collector−Emi...
Datasheet	NTE2527 PDF File

Overview

NTE2526 (NPN) & NTE2527 (PNP) Silicon Complementary Transistors High Current Switch TO251 Features: D Low Collector−Emitter Saturation Voltage D High Current and High fT D Excellent Linearity of hFE D Fast Switching Time D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO .
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120V Collector Emitter Voltage, VCEO .
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100V Emitter Base Voltage, VEBO .
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6V Collector Current, Continuous IC.
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4A Pulse .
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8A Collector TTAC P=o+w2e5r°CDis.
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= +25°C .
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1W 20W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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−55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain−Bandwidth Product NTE2526 NTE2527 ICBO IEBO hFE fT VCB ...

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