DatasheetsPDF.com

AO4710

Alpha & Omega Semiconductors
Part Number AO4710
Manufacturer Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Published Feb 9, 2015
Detailed Description AO4710 30V N-Channel MOSFET SRFET TM General Description SRFET TM The AO4710 uses advanced trench technology with a mon...
Datasheet PDF File AO4710 PDF File

AO4710
AO4710


Overview
AO4710 30V N-Channel MOSFET SRFET TM General Description SRFET TM The AO4710 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON), and low gate charge.
This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Product Summary VDS (V) = 30V ID =12.
7A (VGS = 10V) RDS(ON) < 11.
8mΩ (VGS = 10V) RDS(ON) < 14.
2mΩ (VGS = 4.
5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current C Repetitive avalanche energy L=0.
3mH C IDSM IDM IAR EAR Power Dissipation TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 12.
7 10 60 22 73 3.
1 2.
0 -55 to 150 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Units V V A A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AO4710 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=1mA, VGS=0V IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage VDS=30V, VGS=0V VDS=0V, VGS= ±12V VDS=VGS ID=250µA TJ=125°C ID(ON) On state drain current RDS(ON) Static Drain-Source On-Resistance VGS=10V, VDS=5V VGS=10V, ID=12.
7A VGS=4.
5V, ID=11A TJ=125°C gFS Forward Transconductance VSD Diode Forward Voltage VDS=5V, ID=12.
7A IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V,...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)